Invention Grant
- Patent Title: Using an interconnect bump to traverse through a passivation layer of a semiconductor die
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Application No.: US16113243Application Date: 2018-08-27
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Publication No.: US10777524B2Publication Date: 2020-09-15
- Inventor: Thomas Scott Morris , Michael Meeder
- Applicant: Qorvo US, Inc.
- Applicant Address: US NC Greensboro
- Assignee: Qorvo US, Inc.
- Current Assignee: Qorvo US, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/498 ; H01L21/768 ; H01L23/367 ; H01L23/31 ; H01L23/482
Abstract:
A semiconductor die, which includes a first semiconductor device, a first passivation layer, and a first interconnect bump, is disclosed. The first passivation layer is over the first semiconductor device, which includes a first group of device fingers. The first interconnect bump is thermally and electrically connected to each of the first group of device fingers. Additionally, the first interconnect bump protrudes through a first opening in the first passivation layer.
Public/Granted literature
- US20180366431A1 USING AN INTERCONNECT BUMP TO TRAVERSE THROUGH A PASSIVATION LAYER OF A SEMICONDUCTOR DIE Public/Granted day:2018-12-20
Information query
IPC分类:
