In a global shutter system back-illuminated CMOS image sensor, optical noise is reduced to enhance image quality. A solid-state imaging element is provided that includes: a semiconductor substrate; a photoelectric conversion unit; a charge holding unit; a first penetrating light-shielding film that partitions the photoelectric conversion unit and the charge holding unit from each other; a first bypass part containing a semiconductor material on an outer front surface of the semiconductor substrate; and a control unit that controls charge transfer from the photoelectric conversion unit to the charge holding unit via the first bypass part. A front-side end portion of the first penetrating light-shielding film has, in a thickness direction of the semiconductor substrate, an approximately same length as a front-side end of the charge holding unit or has a longer length than in the front-side end of the charge holding unit in a front side direction.