Invention Grant
- Patent Title: Heterojunction devices and methods for fabricating the same
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Application No.: US15965478Application Date: 2018-04-27
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Publication No.: US10777644B2Publication Date: 2020-09-15
- Inventor: Francis J. Kub , Travis J. Anderson , Marko J. Tadjer , Andrew D. Koehler , Karl D. Hobart
- Applicant: GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY
- Applicant Address: US DC Washington
- Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
- Current Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agency: US Naval Research Laboratory
- Main IPC: H01L29/267
- IPC: H01L29/267 ; H01L29/24 ; H01L29/78 ; H01L29/861 ; H01L29/80 ; H01L29/66 ; H01L29/06 ; H01L29/16 ; H01L29/20 ; H01L29/10
Abstract:
Current conducting devices and methods for their formation are disclosed. Described are vertical current devices that include a substrate, an n-type material layer, a plurality of p-type gates, and a source. The n-type material layer disposed on the substrate and includes a current channel. A plurality of p-type gates are disposed on opposite sides of the current channel. A source is disposed on a distal side of the current channel with respect to the substrate. The n-type material layer comprises beta-gallium oxide.
Public/Granted literature
- US20180315820A1 HETEROJUNCTION DEVICES AND METHODS FOR FABRICATING THE SAME Public/Granted day:2018-11-01
Information query
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