The present disclosure provides semiconductor structures. An exemplary semiconductor structure includes a substrate having a first region and a second region; an isolation structure formed in the substrate in the first region; a compensation doping region formed in the substrate in the first region, locate at a side of the isolation structure adjacent to the substrate in the second region and connecting with the isolation structure; a well region formed in the substrate in the second region; a drift region formed in the substrate in the first region and enclosing the isolation structure and the compensation doping region; a gate structure formed over the substrate in a boundary region between the first region and the second region; a source region formed in the well region at one side of the gate structure; and a drain region formed in the drift region at another side of the gate structure.