Invention Grant
- Patent Title: Manufacturing method for group III nitride semiconductor substrate and group III nitride semiconductor substrate
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Application No.: US15773391Application Date: 2016-11-01
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Publication No.: US10777704B2Publication Date: 2020-09-15
- Inventor: Koji Matsumoto , Toshiaki Ono , Hiroshi Amano , Yoshio Honda
- Applicant: SUMCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SUMCO CORPORATION
- Current Assignee: SUMCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2748f6d7
- International Application: PCT/JP2016/082485 WO 20161101
- International Announcement: WO2017/082126 WO 20170518
- Main IPC: H01L33/12
- IPC: H01L33/12 ; C23C16/34 ; H01L33/32 ; H01L21/02 ; C30B29/38 ; H01L21/302 ; H01L33/22 ; C30B25/02 ; C30B29/40 ; H01L29/20 ; H01L29/34 ; H01L33/00 ; H01L33/02
Abstract:
A manufacturing method for a group III nitride semiconductor substrate is provided with a first step of forming a second group III nitride semiconductor layer on a substrate; a second step of forming a protective layer on the second group III nitride semiconductor layer; a third step of selectively forming pits on dislocation portions of the second group III nitride semiconductor layer by gas-phase etching applied to the protective layer and the second group III nitride semiconductor layer; and a fourth step of forming a third group III nitride semiconductor layer on the second group III nitride semiconductor layer and/or the remaining protective layer so as to allow the pits to remain.
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