Invention Grant
- Patent Title: Electrochemical removal of aluminum nitride substrates for electronic and optoelectronic devices
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Application No.: US16161320Application Date: 2018-10-16
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Publication No.: US10777706B2Publication Date: 2020-09-15
- Inventor: Ken Kitamura , Jianfeng Chen , Leo J. Schowalter
- Applicant: Ken Kitamura , Jianfeng Chen , Leo J. Schowalter
- Applicant Address: US NY Green Island
- Assignee: CRYSTAL IS, INC.
- Current Assignee: CRYSTAL IS, INC.
- Current Assignee Address: US NY Green Island
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01L33/58 ; H01L33/22 ; H01L33/40 ; H01L33/00 ; H01L33/06 ; H01L33/20
Abstract:
In various embodiments, an electrochemical process is utilized to remove at least a portion of a substrate from multiple singulated or unsingulated electronic-device or optoelectronic-device dies. The dies may be attached to a submount for the removal process, and the dies may be immersed in or non-immersively contact an electrolyte during the removal process.
Public/Granted literature
- US20190115501A1 ELECTROCHEMICAL REMOVAL OF ALUMINUM NITRIDE SUBSTRATES FOR ELECTRONIC AND OPTOELECTRONIC DEVICES Public/Granted day:2019-04-18
Information query
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