Invention Grant
- Patent Title: Phase changeable memory device and semiconductor integrated circuit device including the same
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Application No.: US16274796Application Date: 2019-02-13
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Publication No.: US10777740B2Publication Date: 2020-09-15
- Inventor: Dong Yean Oh , Chang Soo Woo
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3a0b98ea
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
A semiconductor integrated circuit device and a fabrication method thereof are disclosed. The resistive memory device includes a lower electrode, a resistive layer formed in a resistance change region on the lower electrode, an upper electrode formed on the resistive layer, and an insertion layer configured to allow a reset current path of the resistive layer, which is formed from the upper electrode to the lower electrode, to be bypassed in a direction perpendicular to or parallel to a surface of the lower electrode.
Public/Granted literature
- US20190181335A1 PHASE CHANGEABLE MEMORY DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING THE SAME Public/Granted day:2019-06-13
Information query
IPC分类:
