Invention Grant
- Patent Title: Method of manufacturing semiconductor structure
-
Application No.: US16404202Application Date: 2019-05-06
-
Publication No.: US10781098B2Publication Date: 2020-09-22
- Inventor: Hung-Hua Lin , Ping-Yin Liu , Kuan-Liang Liu , Chia-Shiung Tsai , Alexander Kalnitsky
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: B81C1/00
- IPC: B81C1/00

Abstract:
A method of manufacturing a semiconductor structure includes receiving a first substrate including a first dielectric layer disposed over the first substrate and a first conductive structure surrounded by the first dielectric layer; receiving a second substrate including a second dielectric layer disposed over the second substrate and a second conductive structure surrounded by the second dielectric layer; bonding the first dielectric layer with the second dielectric layer; and bonding the first conductive structure with the second conductive structure.
Public/Granted literature
- US20190256352A1 METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE Public/Granted day:2019-08-22
Information query