Invention Grant
- Patent Title: Storage device
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Application No.: US16083952Application Date: 2016-05-12
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Publication No.: US10782917B2Publication Date: 2020-09-22
- Inventor: Naoya Okada , Masanori Takada , Mitsuo Date , Sadahiro Sugimoto , Norio Simozono
- Applicant: HITACHI, LTD.
- Applicant Address: JP Tokyo
- Assignee: HITACHI, LTD.
- Current Assignee: HITACHI, LTD.
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- International Application: PCT/JP2016/064148 WO 20160512
- International Announcement: WO2017/195324 WO 20171116
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
High reliability and high performance of a storage device formed of a Dual port NVMe SSD are achieved while preventing the risk of destruction of data. The storage device includes a main memory that belongs to each of two or more clusters and that stores data related to an IO request; and a processor belonging to each of the clusters controlling accesses to the main memory. The main memory includes a first region where writing from the memory drive is permitted and a second region where the writing is prohibited. The processor selects the first region as a transfer destination related to the IO request from the memory drive when the IO request is a first request, and selects the second region as the transfer destination related to the IO request from the memory drive while permitting writing to the second region when the IO request is a second request.
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