Invention Grant
- Patent Title: Magnetic memory device
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Application No.: US16118937Application Date: 2018-08-31
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Publication No.: US10783947B2Publication Date: 2020-09-22
- Inventor: Katsuhiko Koui , Hiroaki Yoda , Tomoaki Inokuchi , Naoharu Shimomura
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2ba92b33
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/02 ; H01L27/22 ; H01L43/10

Abstract:
According to one embodiment, a magnetic memory device includes a first member, a first memory cell, and a controller. The first member includes first, second, and third regions. The first memory cell includes first and second magnetic layers, and a first nonmagnetic layer. The second magnetic layer is provided between the third region and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second regions, and the first magnetic layer. The controller programs first information to the first memory cell by setting the first magnetic layer to a first electric potential. The controller programs second information to the first memory cell by setting the first magnetic layer to a second electric potential. The second electric potential is different from the first electric potential. The second information is different from the first information.
Public/Granted literature
- US20190287597A1 MAGNETIC MEMORY DEVICE Public/Granted day:2019-09-19
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