Invention Grant
- Patent Title: In-memory computation device with inter-page and intra-page data circuits
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Application No.: US16297504Application Date: 2019-03-08
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Publication No.: US10783963B1Publication Date: 2020-09-22
- Inventor: Chun-Hsiung Hung , Shang-Chi Yang
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G06N3/063 ; G06N3/08

Abstract:
An in-memory computation device is described that comprises a memory with a plurality of blocks B(n) of cells, where n ranges from 0 to N−1. A page output circuit PO(n) and page input circuit PI(n) are operatively coupled to block B(n) in the plurality of sets. A data bus system for providing an external source of input data and a destination for output data is provided. Data circuits are configurable connect page input circuit PI(n) to one or more of page output circuit PO(n), page output circuit PO(n−1), and the data bus system to source the page input data in a sensing cycle. This configuration can be done between each sensing cycle, or in longer intervals, in order to support a variety of neural network configurations and operations.
Public/Granted literature
- US20200286553A1 IN-MEMORY COMPUTATION DEVICE WITH INTER-PAGE AND INTRA-PAGE DATA CIRCUITS Public/Granted day:2020-09-10
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