Invention Grant
- Patent Title: Back-side friction reduction of a substrate
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Application No.: US15650352Application Date: 2017-07-14
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Publication No.: US10784100B2Publication Date: 2020-09-22
- Inventor: Hoyoung Kang
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; G03F7/42 ; H01L21/027 ; H01L21/67 ; G03F7/09 ; G03F7/16 ; H01L21/306 ; H01L21/687 ; H01L21/66

Abstract:
A processing chamber system includes a substrate mounting module configured to secure a substrate within a first processing chamber. The system also includes a first deposition module configured to apply a light-sensitive film to a front side surface of the substrate, and a second deposition module configured to apply a film layer to a backside surface of the substrate. The front side surface is opposite to the backside surface of the substrate. A substrate has a bare backside surface with a first coefficient of friction. A film layer is formed onto the backside surface of the substrate. The film layer formed on the backside surface of the substrate has a second coefficient of friction. The second coefficient of friction is lower than the first coefficient of friction.
Public/Granted literature
- US20180025899A1 BACK-SIDE FRICTION REDUCTION OF A SUBSTRATE Public/Granted day:2018-01-25
Information query
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