Invention Grant
- Patent Title: Tungsten film forming method, film forming system and film forming apparatus
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Application No.: US16250009Application Date: 2019-01-17
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Publication No.: US10784110B2Publication Date: 2020-09-22
- Inventor: Takashi Sameshima , Koji Maekawa , Katsumasa Yamaguchi
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@79fe3fda
- Main IPC: H01L21/285
- IPC: H01L21/285 ; C23C16/14 ; C23C16/34 ; C23C16/56 ; C23C16/44 ; C23C16/52 ; C23C16/02 ; H01L21/768 ; H01L21/28
Abstract:
A tungsten film forming method in which a substrate having a TiN film formed thereon is disposed in a processing container and a tungsten film is formed above a surface of the substrate while heating the substrate in a reduced pressure atmosphere, includes forming a first film of an aluminum-containing material on the substrate and forming the tungsten film on the first film.
Public/Granted literature
- US20190221434A1 TUNGSTEN FILM FORMING METHOD, FILM FORMING SYSTEM AND FILM FORMING APPARATUS Public/Granted day:2019-07-18
Information query
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