Invention Grant
- Patent Title: Laminate, etching mask, method of producing laminate, method of producing etching mask, and method of producing thin film transistor
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Application No.: US16082479Application Date: 2016-11-21
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Publication No.: US10784120B2Publication Date: 2020-09-22
- Inventor: Satoshi Inoue , Tatsuya Shimoda , Kazuhiro Fukada , Kiyoshi Nishioka
- Applicant: Japan Advanced Institute of Science and Technology , Sumitomo Seika Chemicals Co., Ltd.
- Applicant Address: JP Ishikawa JP Hyogo
- Assignee: JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY,SUMITOMO SEIKA CHEMICALS CO., LTD.
- Current Assignee: JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY,SUMITOMO SEIKA CHEMICALS CO., LTD.
- Current Assignee Address: JP Ishikawa JP Hyogo
- Agency: Buckley, Maschoff & Talwalkar LLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@94abc15
- International Application: PCT/JP2016/084398 WO 20161121
- International Announcement: WO2017/158930 WO 20170921
- Main IPC: B32B3/00
- IPC: B32B3/00 ; H01L21/3213 ; H01L29/786 ; H01L21/02 ; H01L21/467 ; H01L29/66 ; H01L21/027

Abstract:
A laminate by using a paste or solution containing aliphatic polycarbonates having an etching mask function is provided. A method of producing a laminate of the present invention includes a pattern forming step of forming a pattern 80 of a first oxide precursor layer in which a compound of metal to be oxidized into a metal oxide is dispersed in a solution containing a binder (possibly including inevitable impurities) made of aliphatic polycarbonates on an oxide layer 44 or on the second oxide precursor layer to be oxidized into the oxide layer 44; an etching step of, after the pattern forming step, etching the oxide layer 44 or the second oxide precursor layer that is not protected by the pattern 80; and a heating step of, after the etching step, heating the oxide layer 44 or the second oxide precursor layer, and the first oxide precursor layer to a temperature at which the binder is decomposed or higher.
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