Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US16394772Application Date: 2019-04-25
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Publication No.: US10784150B2Publication Date: 2020-09-22
- Inventor: Ching-Chung Su , Jiech-Fun Lu , Jian Wu , Che-Hsiang Hsueh , Ming-Chi Wu , Chi-Yuan Wen , Chun-Chieh Fang , Yu-Lung Yeh
- Applicant: Taiwan Semiconductor Manufacturing Company Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/764
- IPC: H01L21/764 ; H01L21/762 ; H01L21/308
Abstract:
A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.
Public/Granted literature
- US20190252241A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-08-15
Information query
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