Invention Grant
- Patent Title: Highly integrated RF power and power conversion based on Ga2O3 technology
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Application No.: US16435666Application Date: 2019-06-10
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Publication No.: US10784245B2Publication Date: 2020-09-22
- Inventor: Gregg H Jessen
- Applicant: Government of the United States, as represented by the Secretary of the Air Force
- Applicant Address: US OH Wright-Patterson AFB
- Assignee: United States of America as represented by the Secretary of the Air Force
- Current Assignee: United States of America as represented by the Secretary of the Air Force
- Current Assignee Address: US OH Wright-Patterson AFB
- Agency: AFMCLO/JAZ
- Agent Charles Figer, Jr.
- Main IPC: H01L25/18
- IPC: H01L25/18 ; H01L23/00 ; H01L23/14 ; H01L23/373

Abstract:
An integrated circuit is provided including a first substrate with a first thermal conductivity. An active layer is deposited on the first substrate. At least one native device is fabricated on the active layer. A window is formed in the active layer, which exposes a portion of the first substrate. A non-native device is fabricated on a second substrate with a second thermal conductivity lower than the first thermal conductivity. The non-native device is flip-chip mounted in the widow on the first substrate and electrically connected to the at least one native device. The non-native device is also thermally connected to the first substrate such that heat generated by the non-native device is removed through the first substrate.
Public/Granted literature
- US20190296000A1 Highly Integrated RF Power and Power Conversion Based on Ga2O3 Technology Public/Granted day:2019-09-26
Information query
IPC分类: