Invention Grant
- Patent Title: Low voltage trench metal oxide semiconductor field effect transistor
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Application No.: US15373906Application Date: 2016-12-09
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Publication No.: US10784253B2Publication Date: 2020-09-22
- Inventor: Soo Chang Kang , Seung Hyun Kim , Yong Won Lee
- Applicant: Magnachip Semiconductor, Ltd.
- Applicant Address: KR Cheongju-si
- Assignee: Magnachip Semiconductor, Ltd.
- Current Assignee: Magnachip Semiconductor, Ltd.
- Current Assignee Address: KR Cheongju-si
- Agency: Polsinelli PC
- Agent Adam P. Daniels, Esq.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2325fc09
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L49/02 ; H01L29/06 ; H01L29/417 ; H01L29/423 ; H01L29/78 ; H01L29/861
Abstract:
A semiconductor device includes a substrate and a source metal formed on the substrate. A gate pad is formed on the substrate adjacent to the source metal. A gate metal is formed on the substrate and surrounds the gate pad and the source metal. A first diode is formed between the gate metal and the source metal.
Public/Granted literature
- US20170194316A1 LOW VOLTAGE TRENCH METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR Public/Granted day:2017-07-06
Information query
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