Invention Grant
- Patent Title: Integrated resistive processing unit to avoid abrupt set of RRAM and abrupt reset of PCM
-
Application No.: US16436999Application Date: 2019-06-11
-
Publication No.: US10784313B1Publication Date: 2020-09-22
- Inventor: Nanbo Gong , Takashi Ando , Guy M. Cohen
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L27/24 ; G11C13/00 ; H01L45/00 ; G11C11/54 ; G06N3/04
Abstract:
A method is presented for forming a cell structure. The method includes constructing a resistive random access memory (RRAM) device, constructing a phase change memory (PCM) device in series with the RRAM device such that one of the electrodes of the PCM device is connected to a reactive electrode of the RRAM device, and connecting a complementary metal oxide semiconductor (CMOS) inverter to the RRAM and PCM devices to individually control switching behaviors of the RRAM and PCM devices.
Information query
