Invention Grant
- Patent Title: Gate-all-around transistor based non-volatile memory devices
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Application No.: US16686643Application Date: 2019-11-18
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Publication No.: US10784380B2Publication Date: 2020-09-22
- Inventor: Zheng Xu , Zhenxing Bi , Dexin Kong , Qianwen Chen
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L27/11521 ; H01L29/06 ; H01L29/423 ; H01L29/66 ; H01L29/49 ; H01L29/786 ; H01L21/28
Abstract:
A semiconductor device including a gate-all-around based non-volatile memory device includes isolated channels including tunnel dielectric material disposed around gate-all-around field effect transistor (GAA FET) channels, at least one floating gate including a first gate material encapsulating the isolated channels, and at least one control gate including a second gate material encapsulating the isolated channels.
Public/Granted literature
- US20200083382A1 GATE-ALL-AROUND TRANSISTOR BASED NON-VOLATILE MEMORY DEVICES Public/Granted day:2020-03-12
Information query
IPC分类:
