Invention Grant
- Patent Title: Graphene-based superconducting transistor
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Application No.: US16351443Application Date: 2019-03-12
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Publication No.: US10784433B2Publication Date: 2020-09-22
- Inventor: Kin Chung Fong , Thomas A. Ohki
- Applicant: RAYTHEON BBN TECHNOLOGIES CORP.
- Applicant Address: US MA Cambridge
- Assignee: Raytheon BBN Technologies Corp
- Current Assignee: Raytheon BBN Technologies Corp
- Current Assignee Address: US MA Cambridge
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: H01L39/22
- IPC: H01L39/22 ; H01L39/02 ; H01L39/12 ; H01L27/18

Abstract:
A transistor. In some embodiments, the transistor includes a first superconducting source-drain, a second superconducting source-drain, a graphene channel including at least a portion of a graphene sheet, and a conductive gate. The first superconducting source-drain, the second superconducting source-drain, and the graphene channel together form a Josephson junction having a critical current. The graphene channel forms a current path between the first superconducting source-drain and the second superconducting source-drain. The conductive gate is configured, upon application of a electric field across the conductive gate and the graphene channel by applying a voltage, to modify the critical current.
Public/Granted literature
- US20190288177A1 GRAPHENE-BASED SUPERCONDUCTING TRANSISTOR Public/Granted day:2019-09-19
Information query
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