Invention Grant
- Patent Title: Three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer
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Application No.: US16121480Application Date: 2018-09-04
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Publication No.: US10784437B2Publication Date: 2020-09-22
- Inventor: Satoru Araki
- Applicant: SPIN MEMORY, Inc.
- Applicant Address: US CA Fremont
- Assignee: SPIN MEMORY, Inc.
- Current Assignee: SPIN MEMORY, Inc.
- Current Assignee Address: US CA Fremont
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/10 ; G11C11/14 ; H01L43/12 ; H01L27/22 ; H01L21/822
Abstract:
A Magnetic Tunnel Junction (MTJ) device can include a reference magnetic layer having one or more trenches disposed therein. One or more sections of a tunnel barrier layer can be disposed on the walls of the one or more trenches. One or more sections of a free magnetic layer can be disposed on the one or more sections of the tunnel barrier layer in the one or more trenches. One or more sections of a conductive layer can be disposed on the one or more sections of the free magnetic layer in the one or more trenches. One or more insulator blocks can be disposed between corresponding sections of the tunnel barrier layer, corresponding sections of the free magnetic layer and corresponding sections of the conductive layer in the one or more trenches.
Public/Granted literature
Information query
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