Invention Grant
- Patent Title: Magnetoresistive effect element
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Application No.: US16209533Application Date: 2018-12-04
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Publication No.: US10784438B2Publication Date: 2020-09-22
- Inventor: Kazuumi Inubushi , Katsuyuki Nakada
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3d742959
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/02 ; H01L43/12 ; H01L43/10 ; H01L43/08

Abstract:
A magnetoresistive effect element according to one aspect of the present disclosure includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer. The spacer layer is provided between the first ferromagnetic layer and the second ferromagnetic layer. The spacer layer includes an Mn alloy represented by General Formula (1). MnγX1-γ (1) (in the Formula, X is at least one metal selected from the group consisting of Al, V, Cr, Cu, Zn, Ag, Au, an NiAl alloy, an AgMg alloy, and an AgZn alloy, and γ is 0
Public/Granted literature
- US20190173000A1 MAGNETORESISTIVE EFFECT ELEMENT Public/Granted day:2019-06-06
Information query
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