Invention Grant
- Patent Title: System and method for anti-ambipolar heterojunctions from solution-processed semiconductors
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Application No.: US16688714Application Date: 2019-11-19
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Publication No.: US10784848B2Publication Date: 2020-09-22
- Inventor: Deep M. Jariwala , Vinod K. Sangwan , Weichao Xu , Hyungil Kim , Tobin J. Marks , Mark C. Hersam
- Applicant: Northwestern University , Regents of the University of Minnesota
- Applicant Address: US IL Evanston US MN Minneapolis
- Assignee: Northwestern University,Regent of the University of Minnesota
- Current Assignee: Northwestern University,Regent of the University of Minnesota
- Current Assignee Address: US IL Evanston US MN Minneapolis
- Agency: Benesch, Friedlander, Coplan & Aronoff LLP
- Main IPC: H01L27/28
- IPC: H01L27/28 ; H03K7/06 ; H01L51/00 ; H01L51/05 ; H01L51/10 ; H01L29/786

Abstract:
Van der Waals heterojunctions are extended to semiconducting p-type single-walled carbon nanotube (s-SWCNT) and n-type film that can be solution-processed with high spatial uniformity at the wafer scale. The resulting large-area, low-voltage p-n heterojunctions can exhibit anti-ambipolar transfer characteristics with high on/off ratios. The charge transport can be efficiently utilized in analog circuits such as frequency doublers and keying circuits that are widely used, for example, in telecommunication and wireless data transmission technologies.
Public/Granted literature
- US20200091904A1 SYSTEM AND METHOD FOR ANTI-AMBIPOLAR HETEROJUNCTIONS FROM SOLUTION-PROCESSED SEMICONDUCTORS Public/Granted day:2020-03-19
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