Embodiments described herein include radio frequency (RF) switches. In general, the embodiments described herein selectively bias the output terminals of one or more switching transistors in the RF switch. Such coupling can provide a bias that significantly reduces the effects of gate-lag. In one embodiment, the RF switch includes an antenna node, a first input/output (I/O) node, a second I/O node, a field-effect transistor (FET), a FET stack, and a bias coupling circuit. In this embodiment the bias coupling circuit electrically couples a gate terminal of the FET to one or more FET output terminals of the FET stack to provide a bias voltage to the output terminal(s).