Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16571023Application Date: 2019-09-13
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Publication No.: US10784866B2Publication Date: 2020-09-22
- Inventor: Yasuhiro Hirashima , Masaru Koyanagi , Yutaka Takayama
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@9e629a7
- Main IPC: G11C7/10
- IPC: G11C7/10 ; H03K3/00 ; H03K19/0175 ; H01L23/538

Abstract:
A semiconductor device includes a latch circuit including a first inverter configured to output a first signal based on an input signal, a second inverter configured to output a first clock signal based on a first strobe signal, a third inverter configured to output a second clock signal based on a second strobe signal, a first clock generation circuit configured to generate a third clock signal having transitions that are delayed with respect to the first clock signal, a second clock generation circuit configured to generate a fourth clock signal having transitions that are delayed with respect to the second clock signal, a fourth inverter configured to output an inversion signal of the first signal in accordance with the third and fourth clock signals, and a data latch circuit configured to latch an output signal of the fourth inverter.
Public/Granted literature
- US20200014385A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-01-09
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