Invention Grant
- Patent Title: Integrated circuit and method of manufacturing the same
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Application No.: US16506728Application Date: 2019-07-09
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Publication No.: US10784869B2Publication Date: 2020-09-22
- Inventor: Shih-Wei Peng , Cheng-Chi Chuang , Chih-Ming Lai , Jiann-Tyng Tzeng , Wei-Cheng Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H03K19/0948
- IPC: H03K19/0948 ; H01L27/02 ; H01L23/522 ; H03K19/20 ; H01L23/528 ; G06F30/392

Abstract:
An integrated circuit includes a first gate, a second gate, a first contact and a first insulating layer. The first gate extends in the first direction and is located on a first level. The second gate extends in the first direction, is located on the first level, and is separated from the first gate in a second direction different from the first direction. The first contact extends in the second direction, overlaps the first gate and the second gate, is located on a second level different from the first level, and is coupled to at least the first gate. The first insulating layer extends in the second direction, overlaps the first gate and the second gate, and is between the second gate and the first contact.
Public/Granted literature
- US20200021292A1 INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2020-01-16
Information query
IPC分类: