Invention Grant
- Patent Title: Activated gas generation apparatus and film-formation treatment apparatus
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Application No.: US15766873Application Date: 2016-01-18
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Publication No.: US10793953B2Publication Date: 2020-10-06
- Inventor: Kensuke Watanabe , Shinichi Nishimura , Yoichiro Tabata
- Applicant: Toshiba Mitsubishi-Electric Industrial Systems Corporation
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
- Current Assignee: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Xsensus LLP
- International Application: PCT/JP2016/051279 WO 20160118
- International Announcement: WO2017/126007 WO 20170727
- Main IPC: C23C16/46
- IPC: C23C16/46 ; C23C16/513 ; H05H1/24 ; H01J37/32

Abstract:
In an activated gas generation apparatus, metal electrodes are formed on a bottom surface of a dielectric electrode, and are disposed so as to face each other with a central region of the dielectric electrode interposed therebetween in plan view. The metal electrodes face each other along the Y direction. A wedge-shaped stepped part is provided so as to protrude upward in the central region on an upper surface of the dielectric electrode. The wedge-shaped stepped part is formed so as to have a shorter formation width in the Y direction as approaching each of a plurality of gas spray holes in plan view.
Public/Granted literature
- US20180291509A1 ACTIVATED GAS GENERATION APPARATUS AND FILM-FORMATION TREATMENT APPARATUS Public/Granted day:2018-10-11
Information query
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