Invention Grant
- Patent Title: Hierarchically structured duplex anodized aluminum alloy
-
Application No.: US16121931Application Date: 2018-09-05
-
Publication No.: US10793966B2Publication Date: 2020-10-06
- Inventor: Zhongfen (Vivian) Ding , Georgios S. Zafiris , Mark R. Jaworowski
- Applicant: United Technologies Corporation
- Applicant Address: US CT Farmington
- Assignee: Raytheon Technologies Corporation
- Current Assignee: Raytheon Technologies Corporation
- Current Assignee Address: US CT Farmington
- Agency: Bachman & LaPointe, P.C.
- Main IPC: C25D11/12
- IPC: C25D11/12 ; C25D11/06 ; C25D11/02 ; C25D11/08 ; C25D11/10 ; C25D11/24
Abstract:
A method of growing a hierarchically structured anodized film to an aluminum substrate including growing a Phosphoric Acid Anodizing (PAA) film layer to an aluminum substrate and growing a multiple of Tartaric-Sulfuric Acid Anodizing (TSA) film layers under the Phosphoric Acid Anodizing (PAA) film layer.
Public/Granted literature
- US20190003072A1 HIERARCHICALLY STRUCTURED DUPLEX ANODIZED ALUMINUM ALLOY Public/Granted day:2019-01-03
Information query
