Invention Grant
- Patent Title: Bandgap voltage reference circuit capable of correcting voltage distortion
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Application No.: US16576710Application Date: 2019-09-19
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Publication No.: US10795395B2Publication Date: 2020-10-06
- Inventor: Chih-Chun Chen
- Applicant: eMemory Technology Inc.
- Applicant Address: TW Hsin-Chu
- Assignee: eMemory Technology Inc.
- Current Assignee: eMemory Technology Inc.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: G05F3/24
- IPC: G05F3/24 ; H03F3/195 ; G05F3/30 ; G05F3/26

Abstract:
A bandgap voltage reference circuit includes an amplifier, a voltage buffer, a first transistor, a first resistor, a second transistor, a second resistor, and a leakage current. The input terminals of the amplifier are coupled to a first reference node and a second reference node respectively. The voltage buffer is coupled to the output terminal of the amplifier for outputting a bandgap reference voltage. The first transistor is coupled to the first reference node, the second first resistor, and can receive the bandgap reference voltage. The second resistor is coupled to the first resistor and a system voltage terminal. The second transistor is coupled to the second reference node, the first resistor, and can receive the bandgap reference voltage. The leakage current compensation element is coupled to the second transistor and the system voltage terminal. A size of the first transistor is greater than the second transistor.
Public/Granted literature
- US20200159272A1 BANDGAP VOLTAGE REFERENCE CIRCUIT CAPABLE OF CORRECTING VOLTAGE DISTORTION Public/Granted day:2020-05-21
Information query
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