A memory system includes a nonvolatile memory device and a controller circuit. The nonvolatile memory device includes a plurality of physical blocks, each including a storage area which is accessible in units of pages. The controller circuit is configured to control reading and writing of data which are performed on the plurality of physical blocks in units of pages. The controller circuit is also configured to execute a first process on the plurality of physical blocks by performing a second process of reading and a third process of data verification on a first page across each of the plurality of physical blocks and then performing the second process of reading and the third process of data verification on a second page across each of the plurality of physical blocks.