Invention Grant
- Patent Title: Chip design method of optimizing circuit performance according to change in PVT operation conditions
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Application No.: US16260890Application Date: 2019-01-29
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Publication No.: US10796054B2Publication Date: 2020-10-06
- Inventor: Ji-youn Kim , Eun-ju Hwang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4d3e5360 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7e1badd9
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06F30/39 ; G06F30/3312 ; G06F119/12

Abstract:
A method of designing a chip having an integrated circuit is provided. The method includes obtaining delta cell delays and delta net delays according to a process, voltage, and temperature (PVT) corner change with respect to a plurality of cells and a plurality of nets forming the integrated circuit; analyzing sensitivity with respect to a delay according to the PVT corner change of a plurality of paths in the integrated circuit, by using the delta cell delays and the delta net delays; determining N-number of sensitivity-critical paths among the plurality of paths based on a result of the analysis, wherein N is an integer greater than or equal to 0; and performing an engineering change order (ECO) based on a result of the determination.
Public/Granted literature
- US20190243938A1 CHIP DESIGN METHOD OF OPTIMIZING CIRCUIT PERFORMANCE ACCORDING TO CHANGE IN PVT OPERATION CONDITIONS Public/Granted day:2019-08-08
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