Invention Grant
- Patent Title: Charge sharing between memory cell plates
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Application No.: US16513036Application Date: 2019-07-16
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Publication No.: US10796742B2Publication Date: 2020-10-06
- Inventor: Eric S. Carman
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C11/22
- IPC: G11C11/22 ; G11C13/04 ; G11C8/08 ; G11C11/56

Abstract:
Methods, systems, techniques, and devices for operating a ferroelectric memory cell or cells are described. A first ferroelectric memory cell may be used to charge a second ferroelectric memory cell by transferring charge from a plate of first ferroelectric memory cell to a plate of the second ferroelectric memory cell. In some examples, prior to the transfer of charge, the first ferroelectric memory cell may be selected for a first operation in which the first ferroelectric memory cell transitions from a charged state to a discharged state and the second ferroelectric memory cell may be selected for a second operation during which the second ferroelectric memory cell transitions from a discharged state to a charged state. The discharging of the first ferroelectric memory cell may be used to assist in charging the second ferroelectric memory cell.
Public/Granted literature
- US20200005849A1 CHARGE SHARING BETWEEN MEMORY CELL PLATES Public/Granted day:2020-01-02
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