Invention Grant
- Patent Title: Nonvolatile memory and memory system
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Application No.: US16429588Application Date: 2019-06-03
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Publication No.: US10796776B2Publication Date: 2020-10-06
- Inventor: Riki Suzuki , Masanobu Shirakawa , Yoshihisa Kojima , Marie Takada , Tsukasa Tokutomi
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7d14aa72
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/34 ; G11C7/08 ; G11C7/10 ; G11C16/08 ; G11C16/16 ; G11C16/26

Abstract:
According to one embodiment, a nonvolatile memory includes: a memory cell array including memory cells; and a controller configured to execute a first refresh process on receiving a first command. The first refresh process includes reprogramming at least one second memory cell among first memory cells to which data has been programmed in a first group. In executing the first refresh process, the controller is configured to: select the second memory cell by verifying with a first voltage using a first amount in a case where the second memory cell has been programmed using the first voltage; and select the second memory cell by verifying with a second voltage using a second amount in a case where the second memory cell has been programmed using the second voltage.
Public/Granted literature
- US20200075110A1 NONVOLATILE MEMORY AND MEMORY SYSTEM Public/Granted day:2020-03-05
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