A plasma processing device includes a processing chamber for generating a plasma, a vacuum window that constitutes a part of a wall of the processing chamber, induction antennas including at least two systems for generating plasma in the processing chamber, radio frequency power sources for applying the current independently to the respective induction antennas, and a controller including phase circuits for controlling the phase of the current of the radio frequency power sources of the respective systems or the current value over time, and a control unit. The controller sequentially time modulates the phase difference between currents flowing to the systems or the current value within a sample processing period to move the plasma generation position so as to make the ion incident angle to the wafer uniform in the wafer plane.