Invention Grant
- Patent Title: Film deposition method
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Application No.: US15592332Application Date: 2017-05-11
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Publication No.: US10796902B2Publication Date: 2020-10-06
- Inventor: Shigehiro Miura
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2797a4bb
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/455 ; C23C16/40 ; C23C16/56 ; H01L21/687 ; C23C16/44 ; C23C16/458 ; H01L21/762

Abstract:
A method performed by a film deposition apparatus includes supplying a first reaction gas, which is adsorbable to hydroxyl groups, to a surface of a substrate and causing the first reaction gas to be adsorbed onto the surface of the substrate; supplying a second reaction gas to the substrate and causing the second reaction gas to react with the first reaction gas adsorbed onto the surface of the substrate to form a reaction product on the substrate; supplying an activated third reaction gas to the substrate to modify a surface of the reaction product; and supplying a fourth reaction gas including a hydrogen-containing gas to at least a partial area of the modified surface of the reaction product to form hydroxyl groups on at least the partial area.
Public/Granted literature
- US20170338099A1 FILM DEPOSITION METHOD Public/Granted day:2017-11-23
Information query
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