Invention Grant
- Patent Title: Manufacture of group IIIA-nitride layers on semiconductor on insulator structures
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Application No.: US16292441Application Date: 2019-03-05
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Publication No.: US10796905B2Publication Date: 2020-10-06
- Inventor: Gang Wang , Michael R. Seacrist
- Applicant: GlobalWafers Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: GlobalWafers Co., Ltd.
- Current Assignee: GlobalWafers Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Armstrong Teasdale LLP
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L21/3205 ; H01L21/02 ; H01L33/00 ; H01L21/762 ; H01L29/778
Abstract:
A method is provided for forming Group IIIA-nitride layers, such as GaN, on substrates. The Group IIIA-nitride layers may be deposited on mesa-patterned semiconductor-on-insulator (SOI, e.g., silicon-on-insulator) substrates. The Group IIIA-nitride layers may be deposited by heteroepitaxial deposition on mesa-patterned semiconductor-on-insulator (SOI, e.g., silicon-on-insulator) substrates.
Public/Granted literature
- US20190206675A1 MANUFACTURE OF GROUP IIIA-NITRIDE LAYERS ON SEMICONDUCTOR ON INSULATOR STRUCTURES Public/Granted day:2019-07-04
Information query
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