Invention Grant
- Patent Title: Method for performing a photolithography process
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Application No.: US16731664Application Date: 2019-12-31
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Publication No.: US10796910B2Publication Date: 2020-10-06
- Inventor: Tsung-Han Ko , Joy Cheng , Ching-Yu Chang , Chin-Hsiang Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semicondutor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semicondutor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/027
- IPC: H01L21/027 ; G03F7/26 ; H01L21/033 ; H01L21/308 ; H01L21/266 ; G03F7/038 ; G03F7/20 ; G03F7/40 ; G03F7/09 ; G03F7/039 ; G03F7/38
Abstract:
A method for performing a photolithography process is provided. The method includes forming a layer over a substrate, and exposing a portion of the layer to form an exposed region. The method also includes performing a baking process on the layer, so that voids are formed in the exposed region of the layer. The method further includes filling the void with a post treatment coating material, and the post treatment coating material is over the exposed region of the layer.
Public/Granted literature
- US20200135452A1 METHOD FOR PERFORMING A PHOTOLITHOGRAPHY PROCESS Public/Granted day:2020-04-30
Information query
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