Invention Grant
- Patent Title: Microwave plasma device
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Application No.: US15941901Application Date: 2018-03-30
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Publication No.: US10796916B2Publication Date: 2020-10-06
- Inventor: Merritt Funk , Jianping Zhao , Lee Chen
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/268

Abstract:
A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.
Public/Granted literature
- US20180226255A1 MICROWAVE PLASMA DEVICE Public/Granted day:2018-08-09
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