Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof by forming thin uniform silicide on epitaxial source/drain structure
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Application No.: US15382921Application Date: 2016-12-19
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Publication No.: US10796924B2Publication Date: 2020-10-06
- Inventor: Yuan-Shun Chao , Chih-Wei Kuo
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/44 ; H01L29/417 ; H01L29/66 ; H01L21/285 ; H01L29/08 ; H01L29/26 ; H01L29/45
Abstract:
In a method of manufacturing a semiconductor device, a first layer containing a Si1-xGex layer doped with phosphorous is formed over an n-type semiconductor layer, a metal layer containing a metal material is formed over the first layer, and a thermal process is performed to form an alloy layer including Si, Ge and the metal material.
Public/Granted literature
- US20170243760A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-08-24
Information query
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