Invention Grant
- Patent Title: Substrate processing apparatus, method of manufacturing semiconductor device and electrode fixing part
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Application No.: US16294495Application Date: 2019-03-06
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Publication No.: US10796934B2Publication Date: 2020-10-06
- Inventor: Tsuyoshi Takeda , Tatsuya Nishino , Takashi Yahata
- Applicant: Kokusai Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Kokusai Electric Corporation
- Current Assignee: Kokusai Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Edell, Shapiro & Finnan, LLC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/67 ; H01J37/32 ; H01L21/677 ; H01L21/31

Abstract:
According to one aspect of the technique described herein, there is provided a technique including: a reaction tube defining a processing chamber wherein a substrate is processed; an electrode provided at an outer circumferential surface of the reaction tube and configured to generate plasma in the process chamber; an electrode fixing part configured to fix the electrode thereto; a heater provided at an outer circumferential surface of the electrode fixing part and configured to heat an inside of the reaction tube; and a spacer configured to provide a predetermined gap between the electrode and a surface of the electrode fixing part.
Public/Granted literature
- US20190206705A1 Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Electrode Fixing Part Public/Granted day:2019-07-04
Information query
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