Invention Grant
- Patent Title: Semiconductor devices and methods of fabricating the same
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Application No.: US16238172Application Date: 2019-01-02
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Publication No.: US10796950B2Publication Date: 2020-10-06
- Inventor: Myeong-Dong Lee , Keunnam Kim , Dongryul Lee , Minseong Choi , Jimin Choi , Yong Kwan Kim , Changhyun Cho , Yoosang Hwang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@377b3191
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/768 ; H01L27/108 ; H01L23/532 ; H01L23/535
Abstract:
According to some embodiments, a semiconductor device may include gate structures on a substrate; first and second impurity regions formed in the substrate and at both sides of each of the gate structures; conductive line structures provided to cross the gate structures and connected to the first impurity regions; and contact plugs connected to the second impurity regions, respectively. For each of the conductive line structures, the semiconductor device may include a first air spacer provided on a sidewall of the conductive line structure; a first material spacer provided between the conductive line structure and the first air spacer; and an insulating pattern provided on the air spacer. The insulating pattern may include a first portion and a second portion, and the second portion may have a depth greater than that of the first portion and defines a top surface of the air spacer.
Public/Granted literature
- US20190157133A1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME Public/Granted day:2019-05-23
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