Invention Grant
- Patent Title: Fin field effect transistor (FinFET) device structure with interconnect structure
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Application No.: US16050013Application Date: 2018-07-31
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Publication No.: US10796955B2Publication Date: 2020-10-06
- Inventor: Che-Cheng Chang , Chih-Han Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L21/70 ; H01L21/768 ; H01L23/485 ; H01L29/417 ; H01L23/522 ; H01L23/528 ; H01L29/66 ; H01L29/78 ; H01L23/532
Abstract:
A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a first metal layer formed over a substrate and a dielectric layer formed over the first metal layer. The semiconductor device structure further includes an adhesion layer formed in the dielectric layer and over the first metal layer and a second metal layer formed in the dielectric layer. The second metal layer is electrically connected to the first metal layer, and a portion of the adhesion layer is formed between the second metal layer and the dielectric layer. The adhesion layer includes a first portion lining with a top portion of the second metal layer, and the first portion has an extending portion along a vertical direction.
Public/Granted literature
- US20180350658A1 Fin Field Effect Transistor (FinFET) Device Structure with Interconnect Structure Public/Granted day:2018-12-06
Information query
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