Invention Grant
- Patent Title: Backside metal patterning die singulation systems and related methods
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Application No.: US16505860Application Date: 2019-07-09
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Publication No.: US10796963B2Publication Date: 2020-10-06
- Inventor: Michael J. Seddon
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Adam R. Stephenson, LTD.
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/02 ; H01L21/311 ; H01L21/268 ; H01L21/3205 ; H01L21/3213 ; H01L21/3065 ; H01L21/324 ; H01L23/544 ; H01L21/66

Abstract:
Implementations of methods of singulating a plurality of die comprised in a substrate may include forming a plurality of die on a first side of a substrate, forming a backside metal layer on a second side of a substrate, applying a polymer layer over the backside metal layer and forming a groove entirely through the polymer layer and partially through a thickness of the backside metal layer. The groove may be located in a die street of the substrate. The method may also include etching through a remaining portion of the backside metal layer located in the die street, removing the polymer layer, singulating the plurality of die in the substrate by removing substrate material in the die street.
Public/Granted literature
- US20200243390A1 BACKSIDE METAL PATTERNING DIE SINGULATION SYSTEMS AND RELATED METHODS Public/Granted day:2020-07-30
Information query
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