Invention Grant
- Patent Title: Semiconductor device and IO-cell
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Application No.: US16032217Application Date: 2018-07-11
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Publication No.: US10796994B2Publication Date: 2020-10-06
- Inventor: Keisuke Nakayama
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Womble Bond Dickinson (US) LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@102110b4
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/522

Abstract:
According to an aspect, a semiconductor device and an IO-cell include a plurality of first power supply lines and a plurality of second power supply lines alternately arranged in a first direction, the first and second power supply lines each being supplied with electric power in which the voltage of the electric power supplied to the first power supply is different from that supplied to the second power supply, and a third power supply line formed in a wiring layer different from a wiring layer in which the first and second power supply lines are arranged, the third power supply line being connected to adjacent first power supply lines among the plurality of first power supply lines through a via, in which all of the first, second and third power supply lines are formed so as to extend in a second direction perpendicular to the first direction.
Public/Granted literature
- US20180323148A1 SEMICONDUCTOR DEVICE AND IO-CELL Public/Granted day:2018-11-08
Information query
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