Invention Grant
- Patent Title: Semiconductor devices including a first cobalt alloy in a first barrier layer and a second cobalt alloy in a second barrier layer
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Application No.: US15825833Application Date: 2017-11-29
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Publication No.: US10796995B2Publication Date: 2020-10-06
- Inventor: Junichi Koike , Reza Arghavani
- Applicant: TOHOKU UNIVERSITY
- Applicant Address: JP Sendai-shi, Miyagi
- Assignee: TOHOKU UNIVERSITY
- Current Assignee: TOHOKU UNIVERSITY
- Current Assignee Address: JP Sendai-shi, Miyagi
- Agency: Sughrue Mion, PLLC
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L23/522 ; H01L23/528 ; H01L23/485 ; H01L21/8238 ; H01L21/768 ; H01L27/11524 ; H01L27/11551 ; H01L27/11529 ; H01L29/417 ; H01L29/78 ; H01L29/45 ; H01L27/11556 ; H01L27/11582
Abstract:
A semiconductor device includes a substrate, a conductive wiring which comprises cobalt or copper and is electrically connected to the substrate, an insulating material which electrically isolates the conductive wiring from neighboring wiring, and a first barrier layer which comprises a first cobalt alloy and is disposed between the conductive wiring and the insulating material.
Public/Granted literature
- US20190164896A1 SEMICONDUCTOR DEVICES INCLUDING COBALT ALLOYS AND FABRICATION METHODS THEREOF Public/Granted day:2019-05-30
Information query
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