Invention Grant
- Patent Title: Method of manufacturing 3DIC structure
-
Application No.: US16576786Application Date: 2019-09-20
-
Publication No.: US10797015B2Publication Date: 2020-10-06
- Inventor: Sung-Feng Yeh , Hsien-Wei Chen , Ming-Fa Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/306 ; H01L23/00 ; H01L21/3105 ; H01L23/31 ; H01L23/48 ; H01L25/00 ; H01L21/56
Abstract:
A method of manufacturing a 3DIC structure includes the following processes. A die is bonded to a wafer. A first dielectric layer is formed on the wafer and laterally aside the die. A second dielectric material layer is formed on the die and the first dielectric layer. A portion of the second dielectric material layer over a non-edge region of the wafer is selectively removed to form a protruding portion over an edge region of the wafer. The second dielectric material layer is planarized to form a second dielectric layer on the first dielectric layer and the die. A bonding film is formed on the second dielectric layer. A carrier is bonded to the wafer through the bonding film.
Public/Granted literature
- US20200013746A1 METHOD OF MANUFACTURING 3DIC STRUCTURE Public/Granted day:2020-01-09
Information query
IPC分类:
