An electrostatic discharge (ESD) protection device includes a semiconductor substrate and a semiconductor fin located on the semiconductor substrate. The semiconductor fin includes a well region, a first doped region, and a second doped region. The first doped region and the second doped region are respectively adjacent to and being separated by a first portion of the well region. The device also includes a first gate structure on the semiconductor fin between the first doped region and the second doped region, and a first conductive structure electrically connecting the gate structure and the first doped region to a same potential. The ESD protection device can also have a third doped region and a second gate structure coupled to the same potential. The device also has a second conductive structure for connecting to a point between an external signal and a circuit to be protected.