Invention Grant
- Patent Title: Method and structure for FinFET devices
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Application No.: US16222081Application Date: 2018-12-17
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Publication No.: US10797052B2Publication Date: 2020-10-06
- Inventor: Yong-Yan Lu , Chia-Wei Soong , Hou-Yu Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/66 ; H01L21/8238 ; H01L29/78 ; H01L29/10 ; H01L21/225 ; H01L29/06
Abstract:
A semiconductor device includes a substrate, an isolation structure over the substrate, and a first semiconductor layer over the substrate. At least a portion of the first semiconductor layer is surrounded by the isolation structure. The semiconductor device further includes a doped material layer between the isolation structure and the first semiconductor layer.
Public/Granted literature
- US20190123049A1 Method and Structure for FinFET Devices Public/Granted day:2019-04-25
Information query
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