Invention Grant
- Patent Title: Conductive feature formation
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Application No.: US16145432Application Date: 2018-09-28
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Publication No.: US10797058B2Publication Date: 2020-10-06
- Inventor: Yu-Lien Huang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L27/11 ; H01L21/8234 ; H01L21/3213 ; H01L27/088 ; H01L29/66 ; H01L29/78 ; H01L21/033

Abstract:
The present disclosure provides example embodiments relating to conductive features, and methods of forming the conductive features, that have differing dimensions. In an embodiment, a structure includes a substrate, a dielectric layer over the substrate, and first and second conductive features through the dielectric layer to first and second source/drain regions, respectively, on the substrate. The first conductive feature has a first length along a longitudinal axis of the first conductive feature and a first width perpendicular to the first length. The second conductive feature has a second length along a longitudinal axis of the second conductive feature and a second width perpendicular to the second length. The longitudinal axis of the first conductive feature is aligned with the longitudinal axis of the second conductive feature. The first width is greater than the second width, and the first length is less than the second length.
Public/Granted literature
- US20200105767A1 Conductive Feature Formation Public/Granted day:2020-04-02
Information query
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