Invention Grant
- Patent Title: Hybrid fin field-effect transistor cell structures and related methods
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Application No.: US16102803Application Date: 2018-08-14
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Publication No.: US10797078B2Publication Date: 2020-10-06
- Inventor: Wei-An Lai , Hui-Zhong Zhuang , Jiann-Tyng Tzeng , Wei-Cheng Lin , Lipen Yuan , Yan-Hao Chen
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agent Jones Day
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/12 ; H01L29/66 ; H01L29/417
Abstract:
In one embodiment, an integrated circuit cell includes a first circuit component and a second circuit component. The first circuit component includes fin field-effect transistors (finFETs) formed in a high fin portion of the integrated circuit cell, the high fin portion of the integrated circuit including a plurality of fin structures arranged in rows. The second circuit component that includes finFETs formed in a less fin portion of the integrated circuit cell, the less fin portion of the integrated circuit including a lesser number of fin structures than the high fin portion of the integrated circuit cell.
Public/Granted literature
- US20200058681A1 Hybrid Fin Field-Effect Transistor Cell Structures and Related Methods Public/Granted day:2020-02-20
Information query
IPC分类:
